Carbon Nanotube Field-effect Transistors
نویسندگان
چکیده
This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experiments can be explained and device designs optimized. The paper concludes with some thoughts on challenges and opportunities for CNTFET electronics.
منابع مشابه
Symmetrical, Low-Power, and High-Speed 1-Bit Full Adder Cells Using 32nm Carbon Nanotube Field-effect Transistors Technology (TECHNICAL NOTE)
Carbon nanotube field-effect transistors (CNFETs) are a promising candidate to replace conventional metal oxide field-effect transistors (MOSFETs) in the time to come. They have considerable characteristics such as low power consumption and high switching speed. Full adder cell is the main part of the most digital systems as it is building block of subtracter, multiplier, compressor, and other ...
متن کاملBallistic (n,0) Carbon Nanotube Field Effect Transistors' I-V Characteristics: A Comparison of n=3a+1 and n=3a+2
Due to emergence of serious obstacles by scaling of the transistors dimensions, it has been obviously proved that silicon technology should be replaced by a new one having a high ability to overcome the barriers of scaling to nanometer regime. Among various candidates, carbon nanotube (CNT) field effect transistors are introduced as the most promising devices for substituting the silicon-based ...
متن کاملPerformance Analysis of Reversible Sequential Circuits Based on Carbon NanoTube Field Effect Transistors (CNTFETs)
This study presents the importance of reversible logic in designing of high performance and low power consumption digital circuits. In our research, the various forms of sequential reversible circuits such as D, T, SR and JK flip-flops are investigated based on carbon nanotube field-effect transistors. All reversible flip-flops are simulated in two voltages, 0.3 and 0.5 Volt. Our results show t...
متن کاملBand bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate
The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...
متن کاملSolution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics
Articles you may be interested in A simple drain current model for single-walled carbon nanotube network thin-film transistors Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template Appl. Strain on field effect transistors with single–walled–carbon nanotube network on flexible substrate Complementary voltage inv...
متن کاملBand bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate
The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...
متن کامل